cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 1/7 BTNA45N3 cystek product specification npn high voltage planar transistor bv ceo 500v i c 150ma v cesat 150mv (max) BTNA45N3 features ? high breakdown voltage. (bv ceo =500v) ? low collector-emitter saturation voltage v cesat . ? high collector current capability i c and i cm . ? high collector current gain h fe at high collector current i c . ? low collector output capacitance. (typ. 5pf at v cb =20v) ? pb-free lead plating an d halogen-free package. symbol outline BTNA45N3 sot-23 1 c b e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 500 collector-emitter voltage v ces 500 collector-emitter voltage v ceo 500 emitter-base voltage v ebo 7 v collector current i c 150 peak collector current , single pulse, pulse width tp<1ms i cm 500 peak base current, single pulse, pulse width tp<1ms i bm 200 ma power dissipation (note ) pd 300 mw junction temperature tj 150 c storage temperature tstg -55~+150 c note : device mounted on a fr-4 pcb, single side d copper, tin plated and standard footprint.
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 2/7 BTNA45N3 cystek product specification 2 thermal characteristics parameter symbol limit unit thermal resistance, junction-to-ambient, in free air (note) rth,j-a 417 thermal resistance, junction- to-solder point rth,j-sp 70 c/w note : device mounted on a fr-4 pcb, single side d copper, tin plated and standard footprint. characteristics (ta=25 c) symbol min. typ. max. unit test conditions *bv cbo 500 - - i c =50 a *bv ces 500 - - i c =50 a *bv ceo 500 - - i c =10ma bv ebo 7 - - v i e =50 a i cbo - - 100 v cb =500v i ces - - 100 v ce =500v i ebo - - 100 na v eb =5v *v ce(sat) 1 - - 90 i c =20ma, i b =2ma *v ce(sat) 2 - - 150 mv i c =50ma, i b =6ma *v be(sat) - - 0.9 i c =50ma, i b =5ma *v be(on) - - 0.9 v v ce =10v, i c =50ma *h fe 1 120 - - - v ce =10v, i c =1ma *h fe 2 120 - 300 - v ce =10v, i c =30ma *h fe 3 120 - - - v ce =10v, i c =50ma *h fe 4 30 - - - v ce =10v, i c =100ma f t 50 - - mhz v ce =20v, i c =10ma, f=100mhz cob - 5 8 pf v cb =20v, i e =0a, f=1mhz ton - 110 - toff - 1500 - ns v ce =100v, i c =50ma, i b 1=5ma, i b 2= -10ma *pulse test: pulse width 300 s, duty cycle 2% ordering information device package shipping marking BTNA45N3 sot-23 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel lk moisture sensitivity level : conform to jedec level 1 recommended storage condition: temperature : 30 c humidity : 60% rh
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 3/7 BTNA45N3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5m a 2ma 2.5ma 5ma ib=500ua current gain vs collector current 1 10 100 1000 0.1 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=125c ta= 75c ta= 25c vce=1v current gain vs collector current 10 100 1000 0.1 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=5v current gain vs collector current 10 100 1000 0.1 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=10v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=10ib 3
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 4/7 BTNA45N3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 10 100 1000 10000 100000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib ta=25c ta=75c 125c on voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=10v 125c 25c 75c capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob power derating curve 0 50 100 150 200 250 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw) 4
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 5/7 BTNA45N3 cystek product specification reel dimension carrier tape dimension 5
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 6/7 BTNA45N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. 6
cystech electronics corp. spec. no. : c241n3 issued date : 2011.06.10 revised date : page no. : 7/7 BTNA45N3 cystek product specification sot-23 dimension *:typical inches h j k d a l g v c b 3 2 1 s style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 9 2009, 0 2010 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 lk millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cysrek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 7
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